Engineering Ambition Can Be Scary – Development of High Power GaN Transistors
A heavy tension hung in the air as the RFHIC test group prepared to switch on their new 600 watt transistor. Engineers in the room huddled behind chairs and under desks to avoid any arcs or sparks as the test began....
Vertical GaN and SiC power semiconductor devices, a comparative introduction – book overview | 2020-06-17
My book, Vertical GaN and SiC Power Devices published by Artech House, is intended to provide a comparative introduction to vertical GaN and SiC power semiconductor devices for students, researchers, and engineers working in the field of crystal growth, processing,...